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Description
Technical Specifications
| Parameter Name | Parameter Value |
|---|---|
| Product Model | 5STP18H4200 |
| Manufacturer | ABB Switzerland Ltd, Semiconductors |
| Product Series | ABB 5STP Phase Control Thyristor Series |
| Product Type | Phase Control Thyristor (SCR), Press-Pack |
| Repetitive Peak Forward/Reverse Blocking Voltage (VDRM/VRRM) | 4200 V |
| Non-Repetitive Peak Reverse Voltage (VRSM) | 4600 V (single pulse, 5 ms) |
| Maximum Average On-State Current (IT(AV)M) | 2075 A (half sine wave, Tc = 70°C) |
| Maximum RMS On-State Current (IT(RMS)) | 3260 A |
| Peak Non-Repetitive Surge Current (ITSM) | 32,000 A (tp = 10 ms); 35,000 A (tp = 8.3 ms) |
| Limiting Load Integral (I²t) | 5120 kA²s (tp = 10 ms); 5000 kA²s (tp = 8.3 ms) |
| On-State Voltage (VT) | 1.53 V (at IT = 2000 A, Tvj = 125°C) |
| Threshold Voltage (VT0) | 0.96 V |
| Slope Resistance (rT) | 0.285 mΩ |
| Critical Rate of Rise of Off-State Voltage (dv/dt)crit | 1000 V/μs (exp. to 0.67 × VDRM, Tvj = 125°C) |
| Critical Rate of Rise of On-State Current (di/dt)crit | 200 A/μs (continuous); 1000 A/μs (with gate boost) |
| Circuit-Commutated Turn-Off Time (tq) | 600 μs (Tvj = 125°C) |
| Forward / Reverse Leakage Current (IDRM / IRRM) | ≤ 300 mA (at VDRM/VRRM, Tvj = 125°C) |
| Holding Current (IH) | 30–80 mA (Tvj = 25°C); 15–60 mA (Tvj = 125°C) |
| Latching Current (IL) | 150–600 mA (Tvj = 25°C); 50–200 mA (Tvj = 125°C) |
| Maximum Junction Temperature (Tvj) | 125°C |
| Package Type | Disk Button, ceramic-metal sealed, O-CEDB-X4 |
| Mounting Force (FM) | 45 kN (min) / 50 kN (nominal) / 60 kN (max) |
| Weight | 0.9 kg |
| Surface Creepage Distance (DS) | 36 mm |
| Air Strike Distance (Da) | 15 mm |
| Mechanical Vibration Tolerance | 50 m/s² (unclamped); 100 m/s² (clamped) |
| Terminal Configuration | 2 main cathode connections (Ø3.6 × 4 holes) + Gate/Aux. Cathode Faston 6.3 × 0.8 |
Main Features and Advantages
The ABB 5STP18H4200 delivers extraordinary value to power electronics engineers by combining ABB’s most advanced silicon engineering with a mechanically robust press-pack architecture. Its defining strength is the patented free-floating silicon technology, which suspends the semiconductor chip within the package so that thermal expansion mismatch between silicon and copper never induces mechanical stress on the crystal lattice. This innovation dramatically extends the power cycling lifetime of the ABB 5STP18H4200, enabling it to endure hundreds of thousands of thermal cycles in traction and industrial rectifier service without developing fatigue cracks—a failure mode that plagues conventional bonded devices.Ultra-Low Conduction Losses: The ABB 5STP18H4200 exhibits a threshold voltage of 0.96 V and a slope resistance of just 0.285 mΩ, resulting in an on-state voltage of only 1.53 V at 2000 A. At its full rated current of 2075 A, conduction losses remain remarkably low, reducing the thermal burden on cooling systems and improving the overall efficiency of the power conversion system. For an HVDC valve hall or aluminum smelting potline carrying thousands of amperes continuously, these low losses translate directly into megawatts of saved energy and substantially lower operating costs over the device’s multi-decade service life.Exceptional Surge Capability: With a non-repetitive peak surge current of 32,000 A for 10 ms (rising to 35,000 A for 8.3 ms pulses), the ABB 5STP18H4200 provides an immense safety margin against fault currents, lightning strikes, and commutation failures. The corresponding I²t limiting load integral of 5120 kA²s ensures that upstream fuses and circuit breakers can be coordinated precisely to protect the device while still allowing it to ride through transient events that would destroy lesser thyristors. This robustness makes the ABB 5STP18H4200 ideally suited for grid-connected applications where fault ride-through capability is mandated by utility regulations.Superior Switching Ruggedness: The ABB 5STP18H4200 features a critical dv/dt immunity of 1000 V/μs and a circuit-commutated turn-off time of 600 μs, enabling reliable operation in phase-controlled rectifiers and inverters switching at elevated voltages. The interdigitated amplifying gate structure ensures uniform turn-on across the entire chip surface, achieving a di/dt capability of 200 A/μs in continuous operation and up to 1000 A/μs with gate current boost. This rapid, homogeneous switching action minimizes local heating and prevents current crowding, further enhancing the device’s reliability.Optimized Mechanical & Thermal Architecture: The press-pack design of the ABB 5STP18H4200 with a nominal clamping force of 50 kN creates excellent thermal contact with both sides of the disc, permitting double-sided cooling via forced air or liquid cooling media. The ceramic-to-metal hermetic seal ensures long-term reliability even in humid or contaminated environments. With a weight of just 0.9 kg and a compact disc profile of 26 mm thickness, the ABB 5STP18H4200 delivers an unrivaled power-to-volume ratio, allowing converter designers to achieve extremely high power density in valve stacks and rectifier bridges.Comprehensive 5STP Series Scalability: As a member of ABB’s 5STP family, the ABB 5STP18H4200 benefits from a proven platform that spans voltage classes from 1600 V to 8500 V and current ratings up to 5120 A. This scalability allows system designers to standardize on ABB 5STP technology across multiple projects, simplifying inventory management, spare parts logistics, and maintenance procedures while ensuring consistent performance and reliability.
