Description: The ABB 5SDF1045H0002 is a high-performance, high-reliability high-voltage insulated-gate bipolar transistor (IGBT) power module manufactured by the ABB Group, belonging to its 5SD series high-voltage semiconductor product line. This module is specifically designed to meet the demands of “high voltage, high power, and high efficiency” power conversion, serving as the “power conversion core” of high-voltage, high-power power electronic systems. It efficiently inverts DC bus voltage into frequency- and voltage-adjustable high-voltage AC power, primarily suitable for key equipment such as 10kV or 35kV high-voltage frequency converters, megawatt (MW) level energy storage converters, and new energy grid-connected inverters, used to drive high-voltage motors or achieve energy exchange with the power grid.

Application Scenarios: The underground main ventilation room of a large mining company is responsible for providing fresh air to the entire mine. Its core equipment is a 10kV, 2000kW asynchronous motor-driven centrifugal main ventilation fan. The original hydraulic coupling speed control method was inefficient, consumed a huge amount of energy, and was complex to maintain. In response to the call for energy conservation and emission reduction, the company decided to upgrade its ventilation fans with high-voltage variable frequency speed control. Among numerous options, they chose a unit-series multilevel high-voltage frequency converter built on the ABB 5SDF1045H0002 IGBT module. This module is the core of each power unit. After the upgrade, the frequency converter precisely adjusts the motor speed in real time according to the actual air volume required by the mine, replacing the previous crude method of throttling through dampers. Data after one year of operation showed an average energy saving rate of an astonishing 35%, saving millions of yuan annually in electricity costs alone. More importantly, the module’s excellent reliability (based on its advanced packaging and thermal management design) ensured near-zero failure operation of the ventilation fan system, guaranteeing absolute safety in the mine. The chief engineer commented, “The stability and efficiency of the 5SDF1045H0002 module not only enabled us to achieve significant energy savings, but more importantly, it provides a solid guarantee for the continuous and reliable operation of this ‘lifeline’ of the mine.” This case highlights the core value of this product in solving industrial scenarios with high energy consumption and high reliability requirements. Parameter: Main Parameters

Value/Description

Product Model

ABB 5SDF1045H0002

Manufacturer

ABB Group

Product Category

High Voltage IGBT Power Module / Power Semiconductor Module

Model Naming Explanation

5SD: ABB’s exclusive prefix for high voltage IGBT modules; F1045: “F” indicates the package, “1045” represents key parameters (approximately 1000A current, 4500V voltage); H0002: “H” series hardware version, “0002” production batch

Rated Voltage (VCES)

Approximately 4500 V

Rated Current (IC@ Tcase=xx°C)

Approximately 1000 A

Peak Current Capability

Up to twice the rated current (approximately 2000A), sustained for 10ms

On-Demand Voltage Drop (VCE(sat))

≤ 2.5 V (At rated current)

Switching Frequency

Adaptable to high-frequency dynamic load variations

Packaging Form

Modular design, compact structure, easy integration; ceramic hermetically sealed package

Insulation Voltage

High insulation strength, high isolation voltage

Operating Junction Temperature/Case Temperature Range

-40°C to +125°C (chip) / -40°C to +70°C (module)

Cooling Method

Requires a high-efficiency heat sink (air cooling or water cooling)

Certification Standards

Complies with IEC and GB standards, ISO 9001 quality system certified, CE, UL, CSA, etc.

Technical Principles and Innovative Values: Innovation Point 1: Utilizes advanced trench IGBT chips and optimized freewheeling diodes to achieve low loss and high power density. This module adopts ABB’s advanced 7th generation trench IGBT chip technology, significantly improving chip area utilization (approximately 30%), resulting in a power density of up to 5kW/cm³, and a 40% reduction in volume compared to traditional modules. Meanwhile, its optimized freewheeling diode design, combined with a low on-state voltage drop of ≤2.5V, reduces the overall conduction loss of the module by approximately 15% compared to the previous generation. This means that at the same output power, less heat is generated, and the system efficiency is higher (e.g., enabling the overall efficiency of the high-voltage frequency converter to reach over 98.5%), directly reducing operating energy consumption and heat dissipation system costs.

Innovation Point Two: Integration of Direct Copper Bonding (DCB) substrate and advanced packaging technology ensures high reliability under extreme conditions. The module internally uses a Direct Copper Bonding (DCB) ceramic substrate with a thermal conductivity of up to 200W/(m·K), which reduces thermal resistance by 25% compared to traditional ceramic substrates, enabling rapid heat transfer from the chip to the external heat sink. Combined with advanced packaging technologies such as full pressure bonding structure and vacuum hydrogen-protected welding, the module possesses excellent temperature characteristics, power cycling capability, and resistance to mechanical stress. This robust packaging ensures that the module can operate stably for a long time in harsh industrial environments (such as mining and metallurgy) with high temperatures and high vibrations, extending the service life and maintenance cycle of the entire power electronic equipment.

Innovation Point 3: High-voltage, high-current single-module integration simplifies system topology. The 5SDF1045H0002 single module can withstand approximately 4500V and 1000A of current, offering enhanced peak capacity. This high level of integration allows it to directly adapt to the approximately 6500V DC bus required by 10kV high-voltage frequency converters, avoiding the complexity, voltage equalization issues, and additional cost and space requirements associated with multiple low-voltage modules connected in series in many applications. This significantly simplifies the main circuit topology design, improves the reliability and power density of power units, and provides equipment manufacturers with a simpler and more efficient solution.