Description:

The LAM 810-102361-222 is a high-performance,automatic RF impedance matching network designed by Lam Research for use in advanced plasma etch and deposition systems—particularly within the Kiyo®and Flex®family of semiconductor wafer processing tools.This critical subsystem ensures maximum power transfer from the RF generator(typically 2 MHz,13.56 MHz,or 60 MHz)to the plasma chamber by dynamically adjusting variable capacitors to maintain a 50-ohm load match,even as process conditions shift during etching.

Engineered for ultra-clean,high-reliability operation in 300mm fabs,the 810-102361-222 features sealed motor assemblies,low-outgassing materials,and fast tuning algorithms to minimize reflected power,prevent arcing,and protect sensitive wafers from process drift—directly impacting yield in sub-10nm logic and 3D NAND manufacturing.

Application Scenarios:

At a leading Asian foundry producing 5nm logic chips,repeated micro-loading defects were traced to intermittent RF matching instability during high-aspect-ratio contact etch.The root cause was wear in the original matching network’s vacuum capacitor bearings,causing tuning lag.After replacing units with reconditioned LAM 810-102361-222 modules featuring upgraded ceramic bearings and recalibrated servo motors,reflected power dropped from>8%to<1.5%,and defect density fell by 62%.Tool availability increased by 11%,adding an estimated$4.3M in monthly revenue from recovered wafer starts.

Parameter:

Main Parameters Value/Description

Product Model 810-102361-222

Manufacturer Lam Research Corporation

Product Category Automatic RF Impedance Matching Network(Auto-Match)

Compatible Systems LAM Kiyo®45/45PE,Flex®45,Exelan®HD,and select Coronus®platforms

RF Frequencies Supported Dual-frequency:typically 2 MHz+27/60 MHz(configurable)

Power Handling Up to 3,000 W per frequency(depends on system configuration)

Tuning Speed<200 ms full range(typical),<50 ms for small adjustments

Reflected Power Target<2%under stable plasma conditions

Control Interface Proprietary Lam RS-485/Ethernet-based tool communication(via ESC box)

Actuation Stepper or servo motors driving vacuum variable capacitors(VVCs)

Environmental Rating Class 1 cleanroom compatible;sealed against process byproducts

Cooling Forced air or water-cooled variants(system-dependent)

Certifications SEMI S2/S8 compliant,CE,RoHS

Note:The“222”suffix often denotes a specific revision with updated firmware,bearing type,or EMI shielding for newer process nodes.

Technical Principles and Innovative Values:

Dual-Frequency Decoupling:The 810-102361-222 independently matches bias and source RF lines,enabling independent control of ion energy and density—essential for atomic-layer-precision etching.

Arc Detection&Recovery:Integrated sensors detect plasma arcs in microseconds and trigger rapid detuning to quench the arc,protecting wafers and chamber components.

Low-Particle Design:All moving parts are enclosed in hermetic or semi-sealed housings to prevent metal wear debris from entering the cleanroom environment.

Self-Diagnostics:Built-in health monitoring reports capacitor position drift,motor current anomalies,and tuning cycle counts—enabling predictive maintenance.

Application Cases and Industry Value:

In a U.S.memory fab scaling 128-layer 3D NAND,engineers faced chamber seasoning delays due to inconsistent ignition caused by slow RF matching.Deploying LAM 810-102361-222 units with enhanced startup algorithms reduced plasma stabilization time from 4.2 seconds to 1.1 seconds.This cut idle time between wafers by 18%,boosting tool throughput by 2.3 wafers/hour—translating to~$22M annual revenue gain across the toolset.

Another implementation:a European R&D lab used the 810-102361-222 in a modified Flex®tool for GaN power device etching.Its stable matching at high Cl₂/O₂chemistries enabled vertical profiles with<2°taper over 5µm depths—critical for next-gen EV inverters.

Related Product Combination Solutions:

LAM 810-102361-221/-223:Alternate revisions with different frequency sets or cooling options

RF Generator(e.g.,ENI ACG-3,MKS Astrol):Must be synchronized with 810-102361-222 tuning logic

ESC(Electrostatic Chuck)Controller:Coordinates with RF match for wafer clamping stability

LAM Chamber Liners&Focus Rings:Wear parts that affect plasma impedance—replace in sync with match recalibration

Plasma Monitoring System(e.g.,VI Probe,OES):Provides feedback to validate match performance

Lam Mentor™Software:For remote diagnostics and tuning parameter optimization

Refurbished Exchange Program:Cost-effective alternative to new OEM pricing with same performance

Installation,Maintenance,and Full-Cycle Support:

Installation of the LAM 810-102361-222 requires integration into the tool’s RF distribution manifold,secure grounding,and calibration via Lam’s service software(e.g.,ToolView or Mentor).Capacitor home positions must be set,and tuning limits configured per recipe.

Recommended maintenance:

Inspect motor couplings every 5,000 hours

Verify VVC vacuum integrity annually(helium leak check)

Clean external vents to prevent overheating

We supply fully tested and calibrated LAM 810-102361-222 units,verified for:

Full-range capacitor motion(0–180°)

Reflected power<2%at 2 kW load

Communication handshake with ESC controller

Arc response time<100µs

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