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Application Scenarios:
In a steel mill’s main rolling mill drive system, the existing 690V AC input rectifier bridge frequently suffers catastrophic failure due to short-circuit currents exceeding the withstand capacity of the thyristors. The Eaton Bussmann 170M5013 is deployed in the AC input line. Its ultra-fast aR characteristic and 200 kA breaking capacity ensure that in the event of a DC link or semiconductor fault, the fuse clears the fault within milliseconds, limiting the let-through energy (I²t = 405,000 A²s) to a value safe for the expensive power devices. The top-mounted striker pin activates upon melting, providing a reliable mechanical signal to trip an associated contactor or lockout circuit, preventing further damage to the drive cabinet.
Parameter:
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Main Parameters
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Value/Description
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|---|---|
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Product Model
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170M5013
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Manufacturer
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Eaton (Bussmann Series)
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Rated Current
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700 A
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Rated Voltage
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690 V AC (IEC), 700 V AC (UL)
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Utilization Category
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aR (Partial range protection of semiconductors)
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Breaking Capacity
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200 kA (AC, 690V)
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I²t (Clearing)
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405,000 A²s (at 660V)
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I²t (Pre-arc)
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60,500 A²s
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Fuse Size Standard
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DIN 43653 / Size 2
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Contact Center Distance
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78 mm
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Terminal Type
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Knife Blade (Fork) with M10 mounting
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Indicator
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Single Striker (Top)
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Dimensions (LxWxH)
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~286 x 165 x 66 mm
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Weight
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~596 g
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Status Note
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Known Suspect/Counterfeit Risk (Per Eaton DB)
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Technical Principles and Innovative Values:
The 170M5013 is engineered specifically for the demanding requirements of power electronics protection, differing fundamentally from general-purpose fuses.
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Innovation Point 1: Semiconductor-Grade Speed (aR Class): Unlike gG/gL fuses which allow prolonged overloads, the aR (accompanied semiconductor protection) class provides extremely fast operation under short-circuit conditions. It is designed to protect sensitive silicon devices (diodes, IGBTs) by clearing faults faster than the semiconductor’s thermal damage time constant, often within a half-cycle of the AC waveform.
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Innovation Point 2: High Energy Limitation (Low I²t): The fuse utilizes a silver-sand construction that generates a high arc voltage and rapidly extinguishes the arc. The specified clearing I²t of 405,000 A²s is a critical parameter for ensuring the thermal stress (I²t) imposed on the protected semiconductor does not exceed its maximum allowable value, a key requirement in VFD and DC drive design.
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Innovation Point 3: Mechanical Trip Indication: The fuse incorporates a built-in striker (impact pin) mechanism. When the fuse element melts, the striker is released under spring force. This provides a positive mechanical indication and can be linked to a microswitch on the fuse base to directly open the circuit breaker or contactor, ensuring complete circuit isolation even if the fault current is low.
