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Description
Technical Specifications
| Parameter Name | Parameter Value |
|---|---|
| Product Model | 5STP26N6500 |
| Manufacturer | ABB Switzerland Ltd., Semiconductors |
| Product Type | Phase Control Thyristor (PCT) / High-Power SCR |
| Package Type | Press-Pack / Hockey-Puck |
| Product Family | ABB 26N Series |
| Max. Surge Peak Blocking Voltage (VDSM/VRSM) | 6500 V (tp=10ms, f=5Hz, Tvj=5…125°C) |
| Max. Repetitive Peak Blocking Voltage (VDRM/VRRM) | 6500 V (f=50Hz, tp=10ms, Tvj=5…125°C) |
| Max. Crest Working Voltage (VDWM/VRWM) | 4340 V |
| Max. Average On-State Current (ITAVM) | 2810 A (half sine wave, Tc=70°C) |
| RMS On-State Current (ITRMS) | 4410 A |
| Peak Non-Repetitive Surge Current (ITSM) | 45×10³ A (10ms) / 50×10³ A (8.3ms) |
| Limiting Load Integral (I²t) | 10.125×10⁶ A²s (10ms) / 10.375×10⁶ A²s (8.3ms) |
| On-State Voltage (VT) | 2.0 V typical (IT=3000A, Tj=125°C) |
| Threshold Voltage (VT0) | 1.12 V |
| Slope Resistance (rT) | 0.29 mΩ |
| Critical Rate of Rise of Off-State Voltage (dv/dtcrit) | 3000 V/µs (Tvj=125°C, exposed to 4340V) |
| Critical Rate of Rise of On-State Current (di/dtcrit) | 200 A/µs continuous |
| Circuit-Commutated Turn-Off Time (tq) | ≤800 µs |
| Gate Trigger Voltage (VGT) | 2.6 V (Tj=25°C) |
| Gate Trigger Current (IGT) | 400 mA (Tj=25°C) |
| Peak Forward Gate Voltage (VFGM) | 12 V |
| Peak Forward Gate Current (IFGM) | 10 A |
| Maximum Gate Power Loss (PG) | 3 W |
| Forward/Reverse Leakage Current (IDRM/IRRM) | 600 mA max (at VDRM/VRRM, Tj=125°C) |
| Holding Current (IH) | 125 mA (Tj=25°C) / 75 mA (Tj=125°C) |
| Latching Current (IL) | 500 mA (Tj=25°C) / 250 mA (Tj=125°C) |
| Max. Junction Temperature (Tj max) | 125°C |
| Storage Temperature Range (Tj stg) | -40°C to +150°C |
| Thermal Resistance Junction-to-Case (RthJC) | 11.4 K/kW (single-side) / 5.7 K/kW (double-side cooled) |
| Thermal Resistance Case-to-Heat Sink (RthCH) | 2 K/kW (single-side) / 1 K/kW (double-side cooled) |
| Mounting Force (FM) | 81–108 kN (90 kN recommended) |
| Housing Thickness (H) | 35–35.6 mm (at FM=90kN, Ta=25°C) |
| Surface Creepage Distance (DS) | 56 mm |
| Air Strike Distance (Da) | 22 mm |
| Weight | 2.9 kg |
| Unclamped Acceleration | 50 m/s² |
| Clamped Acceleration | 100 m/s² |
| Technology | Patented Free-Floating Silicon, Interdigitated Amplifying Gate |
Main Features and Advantages
The 5STP26N6500 distinguishes itself in the high-power semiconductor market through ABB’s patented free-floating silicon technology, a revolutionary wafer design that eliminates mechanical stress between the silicon chip and the ceramic-insulated copper base plates. This innovation enables the 5STP26N6500 to deliver optimum power handling capability while maintaining exceptionally low on-state and switching losses. The free-floating structure allows the silicon to expand and contract symmetrically during thermal cycling, dramatically extending device lifetime and preventing premature failure due to thermal fatigue—a critical advantage for applications requiring decades of uninterrupted operation.Superior electrical performance represents another cornerstone advantage of the 5STP26N6500. With a VDRM/VRSM rating of 6500V and VDWM/VRWM of 4340V, the thyristor comfortably handles the voltage stresses present in 6.5kV-class converter systems. The device’s impressive current handling—2810A average, 4410A RMS, and 45kA surge capability—ensures reliable operation even under severe transient grid faults. The remarkably low threshold voltage of 1.12V combined with slope resistance of just 0.29mΩ translates directly into reduced conduction losses, lower heat sink requirements, and improved overall system efficiency. The 5STP26N6500 achieves a critical dv/dt of 3000V/µs and a di/dt capability of 200A/µs (continuously, controllable to 1000A/µs), providing exceptional robustness against commutation-induced voltage transients that would destroy conventional thyristors.The interdigitated amplifying gate architecture embedded within the 5STP26N6500 ensures extremely uniform turn-on characteristics across the entire silicon wafer. This advanced gate design reduces turn-on time to ≤3µs and guarantees homogeneous current distribution, virtually eliminating localized hotspots that plague older thyristor generations. The 5STP26N6500 also features a controllable circuit-commutated turn-off time of approximately 800µs, making it ideally suited for line-commutated HVDC converters, SVC thyristor-controlled reactors (TCR), and phase-controlled rectifier bridges where precise commutation timing is essential.From a mechanical and thermal perspective, the 5STP26N6500 offers outstanding flexibility through its press-pack hockey-puck construction. The device supports anode-side, cathode-side, or double-side cooled configurations, achieving thermal resistance as low as 5.7K/kW (junction-to-case) in double-side cooled mode. This thermal efficiency, combined with the robust 2.9kg package designed for 81–108kN mounting force, enables the 5STP26N6500 to operate reliably at junction temperatures up to 125°C while withstanding clamped accelerations of 100m/s². The generous 56mm surface creepage distance and 22mm air strike distance provide superior insulation margins, ensuring safe operation in polluted or high-altitude environments where corona and tracking could compromise lesser devices.
